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DMN2009LSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
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Low On-Resistance
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Case: SO-8
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8m ? @ V GS = 10V
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Case Material: Molded Plastic, “Green” Molding Compound.
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? 9m ? @ V GS = 4.5V
? 12m ? @ V GS = 2.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
SO-8
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UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072 grams (approximate)
S
D
TOP VIEW
S
S
G
TOP VIEW
Internal Schematic
D
D
D
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
± 12
Units
V
V
Drain Current (Note 1)
Pulsed Drain Current (Note 3)
Steady
State
T A = 25°C
T A = 70°C
I D
I DM
12
9.6
42
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
1. Device mounted on 2 oz, FR-4 PCB, with R θ JA = 62.5°C/W
Symbol
P D
R θ JA
T J, T STG
Value
2
62.5
-55 to +150
Unit
W
°C/W
°C
2. No purposefully added lead.
3. Pulse width ≤ 10 μ S, Duty Cycle ≤ 1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMN2009LSS
Document number: DS31409 Rev. 6- 2
1 of 5
www.diodes.com
June 2010
? Diodes Incorporated
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